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• W4308873408 endingPage "1605" @default.
• W4308873408 startingPage "1605" @default.
• W4308873408 abstract "(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposited on 2H-AlN/Si presented a better structural quality than the 3C-SiC films grown directly on Si(111) using the well-established two-step carbonization–epitaxy process. The good lattice match of 3C-SiC with AlN may open a reliable route towards high-quality thin heteroepitaxial 3C-SiC films on a silicon wafer. Nevertheless, the 3C-SiC was featured by the presence of twinned domains and small inclusions of 6H-SiC. The formation of a thin AlSiN film at the AlN/Si interface is also reported. This is the first time such AlSiN layers are described within an AlN/Si heterostructure. Furthermore, noticeable modifications were observed in the AlN film. First, the growth process of SiC on AlN induced a reduction of the dislocation density in the AlN, attesting to the structural healing of AlN with thermal treatment, as already observed for other AlN-based heterostructures with higher-temperature processes. The growth of SiC on AlN also induced a dramatic reduction in the insulating character of the AlN, which could be related to a noticeable cross-doping between the materials." @default.
• W4308873408 created "2022-11-18" @default.
• W4308873408 creator A5007566907 @default.
• W4308873408 creator A5011220704 @default.
• W4308873408 creator A5020065136 @default.
• W4308873408 creator A5024332711 @default.
• W4308873408 creator A5044919623 @default.
• W4308873408 creator A5050084169 @default.
• W4308873408 creator A5055999649 @default.
• W4308873408 creator A5056912849 @default.
• W4308873408 creator A5068204908 @default.
• W4308873408 creator A5074374021 @default.
• W4308873408 creator A5079499073 @default.
• W4308873408 date "2022-11-10" @default.
• W4308873408 modified "2023-09-29" @default.
• W4308873408 title "CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth" @default.
• W4308873408 cites W1980411606 @default.
• W4308873408 cites W1994776610 @default.
• W4308873408 cites W2000397420 @default.
• W4308873408 cites W2010569331 @default.
• W4308873408 cites W2010703618 @default.
• W4308873408 cites W2012756562 @default.
• W4308873408 cites W2014031909 @default.
• W4308873408 cites W2016422544 @default.
• W4308873408 cites W2016918086 @default.
• W4308873408 cites W2034500547 @default.
• W4308873408 cites W2034950142 @default.
• W4308873408 cites W2035962306 @default.
• W4308873408 cites W2040325478 @default.
• W4308873408 cites W2041557145 @default.
• W4308873408 cites W2042156725 @default.
• W4308873408 cites W2073350670 @default.
• W4308873408 cites W2078260111 @default.
• W4308873408 cites W2085120035 @default.
• W4308873408 cites W2153582016 @default.
• W4308873408 cites W2281352449 @default.
• W4308873408 cites W2324841415 @default.
• W4308873408 cites W2516931059 @default.
• W4308873408 cites W2945340601 @default.
• W4308873408 cites W2961619967 @default.
• W4308873408 cites W2963119378 @default.
• W4308873408 cites W4281622784 @default.
• W4308873408 cites W4281659264 @default.
• W4308873408 doi "https://doi.org/10.3390/cryst12111605" @default.
• W4308873408 hasPublicationYear "2022" @default.
• W4308873408 type Work @default.
• W4308873408 citedByCount "0" @default.
• W4308873408 crossrefType "journal-article" @default.
• W4308873408 hasAuthorship W4308873408A5007566907 @default.
• W4308873408 hasAuthorship W4308873408A5011220704 @default.
• W4308873408 hasAuthorship W4308873408A5020065136 @default.
• W4308873408 hasAuthorship W4308873408A5024332711 @default.
• W4308873408 hasAuthorship W4308873408A5044919623 @default.
• W4308873408 hasAuthorship W4308873408A5050084169 @default.
• W4308873408 hasAuthorship W4308873408A5055999649 @default.
• W4308873408 hasAuthorship W4308873408A5056912849 @default.
• W4308873408 hasAuthorship W4308873408A5068204908 @default.
• W4308873408 hasAuthorship W4308873408A5074374021 @default.
• W4308873408 hasAuthorship W4308873408A5079499073 @default.
• W4308873408 hasBestOaLocation W43088734081 @default.
• W4308873408 hasConcept C110738630 @default.
• W4308873408 hasConcept C159122135 @default.
• W4308873408 hasConcept C159985019 @default.
• W4308873408 hasConcept C160671074 @default.
• W4308873408 hasConcept C185592680 @default.
• W4308873408 hasConcept C192562407 @default.
• W4308873408 hasConcept C2779227376 @default.
• W4308873408 hasConcept C2780722187 @default.
• W4308873408 hasConcept C49040817 @default.
• W4308873408 hasConcept C544956773 @default.
• W4308873408 hasConcept C57410435 @default.
• W4308873408 hasConcept C79794668 @default.
• W4308873408 hasConcept C8010536 @default.
• W4308873408 hasConceptScore W4308873408C110738630 @default.
• W4308873408 hasConceptScore W4308873408C159122135 @default.
• W4308873408 hasConceptScore W4308873408C159985019 @default.
• W4308873408 hasConceptScore W4308873408C160671074 @default.
• W4308873408 hasConceptScore W4308873408C185592680 @default.
• W4308873408 hasConceptScore W4308873408C192562407 @default.
• W4308873408 hasConceptScore W4308873408C2779227376 @default.
• W4308873408 hasConceptScore W4308873408C2780722187 @default.
• W4308873408 hasConceptScore W4308873408C49040817 @default.
• W4308873408 hasConceptScore W4308873408C544956773 @default.
• W4308873408 hasConceptScore W4308873408C57410435 @default.
• W4308873408 hasConceptScore W4308873408C79794668 @default.
• W4308873408 hasConceptScore W4308873408C8010536 @default.
• W4308873408 hasIssue "11" @default.
• W4308873408 hasLocation W43088734081 @default.
• W4308873408 hasLocation W43088734082 @default.
• W4308873408 hasOpenAccess W4308873408 @default.
• W4308873408 hasPrimaryLocation W43088734081 @default.
• W4308873408 hasRelatedWork W1957504099 @default.
• W4308873408 hasRelatedWork W1972495690 @default.
• W4308873408 hasRelatedWork W2009964935 @default.
• W4308873408 hasRelatedWork W2025475064 @default.
• W4308873408 hasRelatedWork W2040246326 @default.
• W4308873408 hasRelatedWork W2050519071 @default.
• W4308873408 hasRelatedWork W2063778609 @default.

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