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- W4308902480 abstract "Emerging wide-bandgap 2D GeSe2 has been considered as a promising candidate for next-generation ultraviolet (UV) imaging systems, which typically require miniaturization, high stability, and self-powered sensing capability. Nevertheless, the lack of reliable wafer-scale synthesis strategies remains a major obstacle to unleashing its full device potential. Herein, we report the synthesis of inch-level 2D GeSe2 layers with precise layer control and customized patterns via a facile post-annealing approach, which reveals a layer-independent direct bandgap of ∼3.0 eV. Moreover, high-quality GeSe2/GaN mixed-dimensional van der Waals heterojunctions fabricated via in-situ growth mode display an ultrasensitive self-powered UV photoresponse with a UV-to-visible rejection ratio of 1.8 × 105, a large responsivity of 261.7 mA/W, a high specific detectivity of 1.24 × 1014 Jones, as well as an ultrafast response speed to track nanosecond pulsed UV signals. In particular, the photodetector could sense ultraweak UV signals with a minimum detection limit of 180 pW/cm2 at 360 nm. Besides, the large-area growth of GeSe2 enables the implementation of integrated photodiode arrays for the self-powered image sensor, demonstrating the great promise of 2D GeSe2 for high-sensitivity UV detection and imaging." @default.
- W4308902480 created "2022-11-19" @default.
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- W4308902480 date "2022-12-01" @default.
- W4308902480 modified "2023-10-14" @default.
- W4308902480 title "Wafer-scale synthesis of wide bandgap 2D GeSe2 layers for self-powered ultrasensitive UV photodetection and imaging" @default.
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- W4308902480 doi "https://doi.org/10.1016/j.nanoen.2022.107972" @default.
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