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• W4308906543 abstract "Present complementary metal–oxide–semiconductor (CMOS) technology with scaled channel lengths exhibits higher energy consumption in designing secure electronic circuits against hardware vulnerabilities and breaches. Specifically, CMOS sense amplifier-based secure differential power analysis (DPA) countermeasures at scaled channel lengths show large energy consumption, with increased vulnerability. Additionally, spin-transfer torque magnetic tunnel junction (STT-MTJ) and CMOS-based logic-in-memory (LiM) cells demonstrate high energy consumption due to the large write current requirement of the STT-MTJ and poor MOS device performance at scaled channel lengths. This paper for the first time leverages emerging tunnel field effect transistor (TFET) steep-slope device characteristics and compatible non-volatile STT-MTJ devices for enhanced hardware security with ultra-low energy consumption at lower supply voltages. TFET-based sense amplifier-based logic (SABL) gates are proposed that achieve 3× lower energy consumption than the Si FinFET SABL designs. Further, utilizing TFET SABL gates, a TFET PRIDE S-box is designed that exhibits higher DPA resilience with 3.2× lower energy consumption than the FinFET designs. With the resulting lower static power consumption, TFET SABL-based cryptosystems are thus less vulnerable to static power side-channel attacks. Additionally, the proposed STT-MTJ and TFET LiM gates achieve 4× lower energy consumption than the STT-MTJ and FinFET designs. Lastly, these gates are explored in a logic encryption/locking technique that shows 3.1× lower energy consumption than the STT-MTJ and FinFET-based design." @default.
• W4308906543 created "2022-11-19" @default.
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• W4308906543 date "2022-11-10" @default.
• W4308906543 modified "2023-10-16" @default.
• W4308906543 title "Emerging tunnel FET and spintronics-based hardware-secure circuit design with ultra-low energy consumption" @default.
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• W4308906543 doi "https://doi.org/10.1007/s10825-022-01958-x" @default.
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