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- W4309138669 abstract "Carrier-selective contacts have emerged as a promising architecture for solar cell fabrication. In this report, the first hole-selective III–V semiconductor solar cell is demonstrated using copper iodide (CuI) on i-GaAs. Surface passivation quality of GaAs is found to be essential for open-circuit voltage (VOC), with good correlation between photoluminescence properties of the GaAs layer and the VOC. Passivation with <10 nm thick In0.49Ga0.51P layers is shown to provide an over 300 mV improvement. Oxygen-rich CuI is formed by natural oxidation in the atmosphere, and the increased oxygen content of ∼10% is validated by energy-dispersive X-ray measurements. The oxygen incorporation is shown to improve hole selectivity and thus solar conversion efficiency. Ultraviolet photoelectron spectroscopy indicates a high work function of ∼6 eV for the oxygen-rich CuI. With optimized GaAs surface passivation and oxygen-rich CuI, a VOC of nearly 1 V and a solar conversion efficiency of 13.4% are achieved. The solar cell structure includes only undoped GaAs, a surface passivation layer, and non-epitaxial CuI contact and is therefore very promising to various low-cost crystal growth methods. The results have a significant impact on III–V solar cell fabrication and costs as it (i) enables fully carrier-selective architectures, (ii) reduces cell fabrication complexity, and (iii) is suitable for layers grown by low-cost crystal growth techniques." @default.
- W4309138669 created "2022-11-23" @default.
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- W4309138669 date "2022-11-16" @default.
- W4309138669 modified "2023-09-27" @default.
- W4309138669 title "CuI as a Hole-Selective Contact for GaAs Solar Cells" @default.
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- W4309138669 doi "https://doi.org/10.1021/acsami.2c16033" @default.
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