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• W4309157099 abstract "Abstract The search and design of two-dimensional (2D) magnetic semiconductors for spintronics applications are particularly significant. In this work, we investigated the electronic and magnetic properties of Janus structure based on Dirac half-metallic vanadium phosphide (VP) monolayer (ML) by first-principles calculations. Due to the vertical symmetry breaking, Janus V 2 AsP ML becomes an intrinsic ferromagnetic semiconductor with a narrow band gap of 0.21 eV. We analyzed the electronic structure and origin of the in-plane easy axis in Janus V 2 AsP. The electron effective mass is anisotropic and only 0.129 m 0 along the x -direction. The Curie temperature <?CDATA $T_mathrm{c}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:msub> <mml:mi>T</mml:mi> <mml:mrow> <mml:mi mathvariant=normal>c</mml:mi> </mml:mrow> </mml:msub> </mml:math> and magnetic anisotropy energy (MAE) of Janus V 2 AsP reach 490 K and 178 µ eV per V atom, respectively. A uniaxial tensile stain ɛ x of 5% can increase its band gap and MAE to 0.39 eV and 210.6 µ eV per V atom while maintaining its <?CDATA $T_mathrm{c}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:msub> <mml:mi>T</mml:mi> <mml:mrow> <mml:mi mathvariant=normal>c</mml:mi> </mml:mrow> </mml:msub> </mml:math> being above room temperature. Moreover, the direction of the easy axis can be changed between the in-plane x - and y -direction by a small uniaxial tensile strain ɛ x of 2%. Our study can motivate further research on the design the magnetic semiconductors in Janus structures based on 2D Dirac half-metals for spintronics applications." @default.
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• W4309157099 date "2022-12-14" @default.
• W4309157099 modified "2023-10-16" @default.
• W4309157099 title "Janus V₂AsP monolayer : a ferromagnetic semiconductor with a narrow band gap, a high Curie temperature and controllable magnetic anisotropy" @default.
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• W4309157099 doi "https://doi.org/10.1088/1361-648x/aca30c" @default.
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