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- W4309472180 abstract "An ultrasonic chemical assisted polishing (UCAP) method exploiting the recombination mechanism of ultrasonic vibration, Fenton oxidation and mechanical impact is proposed for efficient finishing of silicon carbide (SiC). Experiments and theoretical analyses were performed to explore the effect of H 2 O 2 content, FeSO 4 content and ultrasonic amplitude on removal rate and surface roughness of UCAP and material removal mechanism. The combined interactions of ultrasonic and Fenton oxidation achieved superior polished efficiency and quality with a 19.51 % improvement in MRR and a 18.3 % increase in Ra compared to MP. This originates from the synergistic effect of oxidation of OH generated by chemical polishing slurry and the promotion of mechanical removal of abrasives and oxidation rate of SiC by ultrasonic vibration. Excessive FeSO 4 and insufficient H 2 O 2 can induce flocculent precipitates, thus reducing the MRR of SiC UCAP. Moreover, a larger ultrasonic amplitude generated a greater MRR, but with a smaller deterioration of the machined surface. This investigation reveals that UCAP is a progressive precision machining approach for optical ceramic materials polishing. The proposed polishing process will promote hybrid processing technologies research and simplify the existing SiC machining process to achieve extremely efficient polishing of SiC. • An ultrasonic chemical assisted polishing method is proposed for efficient finishing of silicon carbide. • Polishing performance of chemical polishing slurry under ultrasonic is superior to the traditional diamond slurry. • Polishing mechanism including Fenton oxidation, ultrasonic vibration and mechanical removal was unveiled. • Ultrasonic chemical assisted polishing is a progressive precision manufacturing approach for optical material polishing." @default.
- W4309472180 created "2022-11-28" @default.
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- W4309472180 date "2022-12-01" @default.
- W4309472180 modified "2023-10-15" @default.
- W4309472180 title "Study on material removal mechanism in ultrasonic chemical assisted polishing of silicon carbide" @default.
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- W4309472180 doi "https://doi.org/10.1016/j.jmapro.2022.11.014" @default.
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