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- W4309477396 abstract "Carrier efficiency is the most crucial factor for the transparent photovoltaic devices. In this work, the Cu 2 O/SnO 2 QDs/SnO 2 pn junction transparent photovoltaic device is fabricated via a continuous sputtering-chemical-annealing method. As revealed, the as-prepared transparent photovoltaic device exhibits high transparency of ~80% in visible light, noticeable photovoltaic conversion enhancement of ~1.1×10 3 folds, and decent stability during the 20000 s cycle. It could be mainly ascribed to that the SnO 2 QDs with high quantum yield and appropriate potential can accelerate charge carrier injection and separation/migration for increasing carrier efficiency. Additionally, the SnO 2 QDs with multiple reflections/interference can improve pn junction interface and increase solar efficiency while being transparent. • High QY of SnO 2 QD can increase charge carrier injection to increase concentration • Regulated potential of SnO 2 QD can act as transition layer to increase mobility • Homogeneous SnO 2 QDs with well lattice matching can decrease interface scattering" @default.
- W4309477396 created "2022-11-28" @default.
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- W4309477396 date "2022-12-01" @default.
- W4309477396 modified "2023-10-18" @default.
- W4309477396 title "A transparent photovoltaic device of Cu2O/SnO2 QDs/SnO2 pn junction with difunctional homogeneous SnO2 QDs transition layer" @default.
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- W4309477396 doi "https://doi.org/10.1016/j.photonics.2022.101091" @default.
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