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- W4309709000 abstract "A trade-off between the memory window and the endurance exists for transition-metal-oxide RRAM. In this work, we demonstrated that HfOx/Ge-based metal-insulator-semiconductor RRAM devices possess both a larger memory window and longer endurance compared with metal-insulator-metal (MIM) RRAM devices. Under DC cycling, HfOx/Ge devices exhibit a 100× larger memory window compared to HfOx MIM devices, and a DC sweep of up to 20,000 cycles was achieved with the devices. The devices also realize low static power down to 1 nW as FPGA’s pull-up/pull-down resistors. Thus, HfOx/Ge devices act as a promising candidates for various applications such as FPGA or compute-in-memory, in which both a high ON/OFF ratio and decent endurance are required." @default.
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- W4309709000 date "2022-11-20" @default.
- W4309709000 modified "2023-10-16" @default.
- W4309709000 title "HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance" @default.
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- W4309709000 doi "https://doi.org/10.3390/electronics11223820" @default.
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