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• W4309797006 abstract "The effect of overlap region for schottky metal and field oxide (ORSMFO) of field limiting rings termination on the reverse breakdown voltage of 6500 V/50A 4H-SiC JBS diodes was studied. Two comparative diodes were designed and fabricated. The reverse breakdown voltage of diodes with 20 μm ORSMFO improved significantly, which was up to 7000 V at the reverse leakage current of 10 μA and yield was up to 73 %. The structure simulation implied that the difference of the ORSMFO influenced the electric field strongly. Compared with the simulative terminal structure with 3 μm and 0 μm ORSMFO, the electric field intensity of the simulative terminal structure with 20 μm ORSMFO reduced by about 30 %-50 % near the main junction and the first three field rings." @default.
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• W4309797006 date "2023-02-01" @default.
• W4309797006 modified "2023-09-23" @default.
• W4309797006 title "Effect of overlap region for schottky metal and field oxide on the electrical characteristics of 6500 V/50A 4H-SiC JBS diodes" @default.
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• W4309797006 doi "https://doi.org/10.1016/j.jcrysgro.2022.127009" @default.
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