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• W4309915879 endingPage "2200167" @default.
• W4309915879 startingPage "2200167" @default.
• W4309915879 abstract "High-aspect-ratio (HAR) etch of SiO2 films was attempted using a low-frequency (2 MHz) bias power in an inductively coupled plasma (ICP) system using heptafluoroisopropyl pentafluoroethyl ketone (C6F12O) gas, which has a lower global warming potential (GWP). Etching characteristics of the oxide film according to changes such as the CF4/C6F12O mixing ratio, source power (13.56 MHz), and bias power were derived. To understand the etching characteristics and mechanism, optical emission spectroscopy (OES), double Langmuir probe (DLP) measurement, and X-ray photoelectron spectroscopy (XPS) analysis were performed. We observed the vertically etched profile of the 100 nm etched line pattern with a scanning electron microscope (SEM) and at first suggested that the HAR oxide etching process is feasible using the ICP system." @default.
• W4309915879 created "2022-11-30" @default.
• W4309915879 creator A5019313133 @default.
• W4309915879 creator A5046574035 @default.
• W4309915879 creator A5084576128 @default.
• W4309915879 date "2022-11-23" @default.
• W4309915879 modified "2023-09-30" @default.
• W4309915879 title "High‐aspect‐ratio oxide etching using CF ₄ /C ₆ F ₁₂ O plasma in an inductively coupled plasma etching system with low‐frequency bias power" @default.
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• W4309915879 doi "https://doi.org/10.1002/ppap.202200167" @default.
• W4309915879 hasPublicationYear "2022" @default.
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