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• W4310087112 startingPage "111916" @default.
• W4310087112 abstract "The mechanism of current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) passivated with low-pressure chemical vapor deposited (LPCVD)-SiNx layers, is revealed by a double-sweep current-voltage measurement of a dual-gate HEMT structure. It provides an in-situ observation of the trapping/de-trapping process of surface states in HEMTs under high-voltage switching stress, by examining the gate-to-gate surface-hopping leakage IS along with several critical features, such as sweeping-rate and voltage-dependent onset voltage, turn-on slope, onset voltage hysteresis, and current tailing, etc. It is also verified that the plasma-enhanced atomic layer deposited (PEALD) 3-nm -SiNx interfacial layer inserted between the LPCVD-SiNx passivation and the AlGaN barrier, is beneficial for suppressing the surface-trap-induced current collapse in AlGaN/GaN HEMTs." @default.
• W4310087112 created "2022-11-30" @default.
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• W4310087112 date "2023-01-01" @default.
• W4310087112 modified "2023-09-23" @default.
• W4310087112 title "Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures" @default.
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• W4310087112 doi "https://doi.org/10.1016/j.mee.2022.111916" @default.
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