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- W4310242068 abstract "This study investigates a variation of the N2 content in the mixed sputtering gas effects on the optical, electrical, and structural properties of p-type Zn-N-doped SnO2 films. The incorporation of N into the tin oxide lattice of the synthesized films was confirmed by energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD) analysis, ultraviolet–visible (UV–vis) spectroscopy, and Hall measurements. Further, atomic force microscopy, field-emission scanning electron microscopy, and current-voltage characteristics confirmed the substitution of O by N in the SnO2 lattice. The sufficiently large N3−–O2− substitution in the SnO2 lattice was confirmed by a (200) cubic plane in the XRD pattern. N3−–O2− substitution was also ascertained by the redshift of the UV–vis absorption edge. The crystallinity increased significantly with an increase in N3−–O2− substitution in the SnO2 lattice, including an increase in the crystal grain size and a decrease in surface roughness. The optimum N3−–O2− substitution for the film synthesized using 80% N2 in the mixed sputtering gas resulted in the best crystal quality. This film showed the highest hole mobility and the greatest increase in the photocurrent of the film/n-Si heterojunction. The excess N-substituted O content in the tin oxide lattice degraded the crystal quality. Therefore, the optimally synthesized film is more suitable for optoelectronic devices." @default.
- W4310242068 created "2022-11-30" @default.
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- W4310242068 date "2023-03-01" @default.
- W4310242068 modified "2023-09-27" @default.
- W4310242068 title "Incorporation of N in p-type Zn-N-doped SnO2 films by varying N2 content in sputtering gas mixture" @default.
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- W4310242068 doi "https://doi.org/10.1016/j.mssp.2022.107230" @default.
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