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• W4310361779 abstract "III-nitride-based hot electron transistors (HETs) offer a significant promise as high-speed, high-power devices, but their performance has been limited to below that of competing technologies. Here, we report on a HET with current density > 440 kA/cm 2 and common-emitter current gain >20. Polarization engineering of the emitter stack was used to allow for high-current collimated electron injection from the emitter with relatively low turn-on voltage. The use of only polarization charge in the undoped 10 nm-thick base allowed for high gain through minimization of scattering with atomic layer etching contact fabrication used to lower base access resistance." @default.
• W4310361779 created "2022-12-09" @default.
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• W4310361779 date "2022-11-28" @default.
• W4310361779 modified "2023-09-27" @default.
• W4310361779 title "III-nitride vertical hot electron transistor with polarization doping and collimated injection" @default.
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• W4310361779 doi "https://doi.org/10.1063/5.0129920" @default.
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