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• W4310436475 abstract "Polarization-sensitive photodetectors (PDs) based on anisotropic materials spark considerable interest for their potential applications in security surveillance, optical switches, and remote sensing. However, high-thickness or bulk anisotropic materials generally exhibit low polarization sensitivity, hindering their practical applications in polarization photodetection. Herein, a near-infrared (NIR) PD based on a p-type Sb2Se3 microbelt (MB)/n-GaN heterojunction is proposed. The Sb2Se3 MB/GaN PD effectively combines the anisotropy of the Sb2Se3 MB with the heterogeneous integration. The PD presents self-powered detection properties with a responsivity over 12 mA W−1, a specific detectivity exceeding 5 × 1010 Jones, and a response speed (the rising/decaying times ≈74 ms/75 ms) under NIR illumination. More importantly, the heterojunction-based PD has a higher anisotropy ratio of 1.37, which is 1.3 times amplified as compared to the vertical photoconductive-type PDs (the anisotropy ratio of 1.06). The p-n junction's effect on carrier generation and recombination causes the increased polarization sensitivity of Sb2Se3 MB/GaN PDs, as confirmed by finite element method analysis. This work not only offers a deeper insight into polarization sensitivity regulated by junction or interface but also provides a practical method for developing high-sensitivity polarization detectors based on high-thickness or bulk anisotropic materials." @default.
• W4310436475 created "2022-12-10" @default.
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• W4310436475 date "2022-11-30" @default.
• W4310436475 modified "2023-10-12" @default.
• W4310436475 title "Junction‐Enhanced Polarization Sensitivity in Self‐Powered Near‐Infrared Photodetectors Based on Sb ₂ Se ₃ Microbelt/n‐GaN Heterojunction" @default.
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• W4310436475 doi "https://doi.org/10.1002/adom.202202080" @default.
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