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• W4310447941 abstract "The vertical Schottky barrier diode (SBD)-based temperature sensors with the drive modes are a significant issue with more advantageous than the on-chip sensor. The sensitivity ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${S}$ </tex-math></inline-formula> ) and the current conduction mechanisms (CCMs) of the vertical cadmium telluride (CdTe):polyvinyl pyrolidone (PVP)/ <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${p}$ </tex-math></inline-formula> -Si SBD were studied experimentally over the range of 80–340 K and compared with that of the lateral and vertical sensors. It is shown that the low and moderated voltages of the CdTe:PVP/ <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${p}$ </tex-math></inline-formula> -Si corresponding two linear regions of the current–voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${I}$ </tex-math></inline-formula> – <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}$ </tex-math></inline-formula> ) outputs are around 0.1–0.3 and 0.4–0.65 V, respectively. The variation of Schottky barrier height (BH; <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${sf Phi } _{text {Bo}}$ </tex-math></inline-formula> ) and ideality factor ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${n}$ </tex-math></inline-formula> ) with temperature was obtained according to two linear regions. Energy dispersion of the interface traps ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${N}_{text {ss}}$ </tex-math></inline-formula> ) with changing temperature is additionally analyzed quantitatively. It is concluded that the thermionic-emission (TE) theory with double-Gaussian distribution (GD) is the dominant mechanism resulting the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${I}$ </tex-math></inline-formula> – <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}$ </tex-math></inline-formula> characteristics of the vertical CdTe:PVP/ <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${p}$ </tex-math></inline-formula> -Si SBD in this study. Moreover, in the constant current, the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${S}$ </tex-math></inline-formula> values at the drive current of 10, 20, and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$50~mu text{A}$ </tex-math></inline-formula> were resulting in a range of −1.6 to −1.8 mV/K." @default.
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• W4310447941 date "2022-12-01" @default.
• W4310447941 modified "2023-10-10" @default.
• W4310447941 title "Vertical CdTe:PVP/<i>p</i>-Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact" @default.
• W4310447941 doi "https://doi.org/10.1109/jsen.2022.3212867" @default.
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