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- W4310449713 abstract "Silicon Carbide (SiC) N-channel Insulated Gate Bipolar Transistors (n-IGBTs) rated higher than 10kV can improve Medium Voltage and High Voltage power electronics due to the favourable combination of SiC material with the n-IGBT device structure. This paper investigates the phenomenon of unintentional turn-on occurring due to high dV/dt produced during switching transients and analyses the impact of design parameters such as the channel length, the p-well doping and the oxide thickness for their ability to suppress it." @default.
- W4310449713 created "2022-12-10" @default.
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- W4310449713 date "2022-10-09" @default.
- W4310449713 modified "2023-10-18" @default.
- W4310449713 title "Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs" @default.
- W4310449713 doi "https://doi.org/10.1109/ecce50734.2022.9947492" @default.
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