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• W4310528031 abstract "Abstract Zirconium disulfide (ZrS 2 )—an attractive next-generation channel material because of its high mobility—is stabilized in the air by a zirconium dioxide (ZrO 2 ) film which functions as a high-k film in MISFET. We fabricated high-k/PVD-ZrS 2 stacks with a self-oxidized ZrO 2 film as an interfacial layer; their chemical properties were analyzed to clarify how each fabrication process affects the ZrS 2 under the oxide film. The results clarified that sulfur vapor annealing (SVA) is critical for fabricating high-quality physical vapor deposition (PVD) ZrS 2 films and that the change in surface potential of the ZrS 2 films due to interface dipoles between the high-k and Zr-compound films is suppressed with scaling of high-k thickness. The SVA with high-k films also prevents degradation of crystallinity and stoichiometry, enhancing the quality of the ZrS 2 films without affecting their surface potential. These achievements enable us to control the threshold voltage in ZrS 2 MISFETs." @default.
• W4310528031 created "2022-12-11" @default.
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• W4310528031 date "2023-01-09" @default.
• W4310528031 modified "2023-10-14" @default.
• W4310528031 title "Chemical states of PVD-ZrS₂ film underneath scaled high-k film with self-oxidized ZrO₂ film as interfacial layer" @default.
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• W4310528031 doi "https://doi.org/10.35848/1347-4065/aca7cf" @default.
• W4310528031 hasPublicationYear "2023" @default.
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