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- W4310529604 abstract "This paper compares the characteristics of MOSFET and TFET devices fabricated under the same process conditions. From the experimental results, it can be seen that after a period of degradation, the interface state density of the device increases, and the on-state current has a small increase, but the off state current of the TFET has the degradation obviously. The subthreshold swing also increases significantly with the device interface state degradation. The increase of off-state current and the degradation of subthreshold swing are extremely unfavorable for the application of TFET, and optimization is required to prevent the problems such as device failure." @default.
- W4310529604 created "2022-12-11" @default.
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- W4310529604 date "2022-10-25" @default.
- W4310529604 modified "2023-09-26" @default.
- W4310529604 title "Comparative Study on Degradation of the TFET and MOSFET" @default.
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- W4310529604 doi "https://doi.org/10.1109/icsict55466.2022.9963149" @default.
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