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- W4310584002 abstract "The microstructure enhanced infrared absorptivity of microbolometer based standard CMOS technology cannot satisfy the enhancement effect of wide spectrum. In this paper, the Si <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> is deposited on the absorber of microbolometer with Al grating to enlarge the absorptivity band to 13 μm. The simulated results show that the optimal thickness of Si <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> deposition is 200 nm and the average absorptivity can be increased by 75.6% at the wavelength range of 10 to 13 μm. The experimental results show that the maximum of detectivity is 2.32×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>9</sup> cmHz <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1/2</sup> /W after depositing 200 nm Si <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</inf> and the average increased percentage is 77.97% at wavelengths of 10 μm to 13 μm, which is very close to the simulated result of 75.6%." @default.
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- W4310584002 date "2022-10-25" @default.
- W4310584002 modified "2023-09-29" @default.
- W4310584002 title "The Performance Enhancement of Polysilicon Microbolometer in Standard CMOS Technology with Si<sub>3</sub>N<sub>4</sub> Film" @default.
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- W4310584002 doi "https://doi.org/10.1109/icsict55466.2022.9963299" @default.
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