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- W4310584517 abstract "Non-uniform thermal distribution affects about large periphery GaN HEMT based on through-via structure is analyzed in the paper. According to the self-heating effect and heat dissipation issues of Si-based GaN HEMT RF power devices, a high density through-via technology employing by conducting thermal near junction of multi-gate finger device downward to the heat sink is further put forward. Its corresponding placement provide a novel path for spreading heat directly from the heat source region of each of cell to the low temperature heat sink. From the thermal simulation with a total gate width of 8.1 mm, it is shown that compared with traditional structure devices, the maximum junction temperature of a uniform gate device with through-via structure is reduced by 34 °C, and the thermal resistance is reduced by 1.05 °C /W. Therefore, the through via technology as key process can play an important role in developing the large periphery RF GaN HEMT on high resistance Si substrate." @default.
- W4310584517 created "2022-12-12" @default.
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- W4310584517 date "2022-10-25" @default.
- W4310584517 modified "2023-09-29" @default.
- W4310584517 title "The Electrical-thermal Coupling Modeling about Large Periphery RF GaN HEMT on Si employing by Through Wafer Via Structure" @default.
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- W4310584517 doi "https://doi.org/10.1109/icsict55466.2022.9963151" @default.
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