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- W4310584522 abstract "In this work, a 200-V indium tin oxide (ITO) thin-film transistor (TFT) with a stair drift region was demonstrated for the first time. The proposed high voltage (HV) ITO TFT has the channel region of a 4-nm thick ITO and the stair drift region of a 14-nm thick ITO. The stair ITO of the drift region help to lower the electric field under the high operation voltage, increasing the breakdown voltage (V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BD</inf> ) to 200 V. Meanwhile, the proposed HV TFT owns a small on-resistance (R <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</inf> ) because the 14-nm thick ITO has the minimum resistance. The drift region contributes only 10% of the total R <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on</inf> , which is confirmed by the gate-four-probe (GFP) measurement." @default.
- W4310584522 created "2022-12-12" @default.
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- W4310584522 date "2022-10-25" @default.
- W4310584522 modified "2023-09-24" @default.
- W4310584522 title "200-V ITO Thin-Film Transistors with the Stair-ITO Drift Region" @default.
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- W4310584522 doi "https://doi.org/10.1109/icsict55466.2022.9963204" @default.
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