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- W4310584706 abstract "In this work, the impacts of the semiconductor substrates on ferroelectric-like characteristics in amorphous ZrO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> -based devices have been studied. Metal -oxide-semiconductor (MOS) capacitors are fabricated on Si, SiGe and Ge substrates for comparison. Due to the relatively wide energy band gap (E <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g</inf> ) of Si, a very small depletion capacitor will inhibit polarization switching in TaN/ZrO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> /Si MOS. On the other hand, TaN/ZrO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> /Ge MOS exhibits well ferroelectric-like characteristics, and ferroelectric-type hysteresis window can be obtained for Ge pFETs. These results indicate that the substrates are critical for the ferroelectric-like characteristics demonstration, which is useful for realizing nonvolatile memory applications." @default.
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- W4310584706 date "2022-10-25" @default.
- W4310584706 modified "2023-10-18" @default.
- W4310584706 title "Impacts of the Semiconductor Substrates on the Ferroelectric-like Characteristic on Amorphous Dielectric-Based Devices" @default.
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- W4310584706 doi "https://doi.org/10.1109/icsict55466.2022.9963475" @default.
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