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- W4310585475 abstract "In this work, we investigate the cryogenic random telegraph noise (c-RTN) for 18 nm n- and p-FETs on the FDSOI substrate, to study the impact of temperature on the trapping/de-trapping mechanisms for the FDSOI CMOS. As compared with p-FETs, n-FETs exhibit more complicated and severe c-RTN characteristics at certain bias conditions for their higher interface trap level. The capture τ <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</inf> /emission τ <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>e</inf> time constants were extracted at various temperatures to compare the trapping/detrapping mechanisms at different temperature regions. The shorter and V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</inf> -independent time constants confirm that trap tunneling is the dominant RTN source for the cryogenic drain current variation. The severe c-RTN with higher magnitude and switching frequency should be considered and modeled in the cryogenic circuit design." @default.
- W4310585475 created "2022-12-12" @default.
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- W4310585475 date "2022-10-25" @default.
- W4310585475 modified "2023-09-23" @default.
- W4310585475 title "Phenomenon and Mechanism Investigation of the Cryogenic Random Telegraph Noise for 18 nm FDSOI CMOS" @default.
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- W4310585475 doi "https://doi.org/10.1109/icsict55466.2022.9963364" @default.
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