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- W4310694354 abstract "In recent years, passivating contacts based on SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /poly-Si have proven to be an enabling technology for Si solar cells. Effective hydrogenation of the interfacial SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> is vital for realizing efficient contacts. Hydrogen-rich dielectrics, such as SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> and Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> , are commonly employed for hydrogenation, whereas also recently, <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>n</i> -type conductive oxides, such as In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> :Sn and ZnO, have been demonstrated to yield excellent hydrogenation. This study presents the use of a <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>p</i> -type metal oxide, specifically NiO, as a suitable hydrogenation source. The <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>p</i> -type character of NiO makes it an interesting candidate for hydrogenation because of its potential use in selective contacting structures. Herein, we show that NiO, synthesized by atomic layer deposition (ALD), can be used to hydrogenate poly-Si/SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> contacts effectively. Furthermore, we benchmark its hydrogenation performance to the established ALD ZnO/Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> stack and provide insights into the hydrogenation process. On planar surfaces, NiO yields almost as excellent results as ZnO/Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> stacks, whereas it lags behind on more challenging textured surfaces. Interestingly, even though elastic recoil detection analysis reveals that ALD NiO is rich in hydrogen, secondary ion mass spectrometry measurements show that, when NiO is compared to the ZnO/Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> stack, less hydrogen is present at the Si/SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> interface after annealing. This is explained from effusion measurements, which show substantial effusion of hydrogen from NiO around 300 °C. Hence, Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> capping is further employed to prevent hydrogen loss and on textured wafers, the NiO/Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> stacks on poly-Si achieve an implied open-circuit voltage of 728 mV, confirming the excellent hydrogenation from ALD metal oxides." @default.
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- W4310694354 date "2022-11-01" @default.
- W4310694354 modified "2023-10-14" @default.
- W4310694354 title "Effective Hydrogenation of Poly-Si Passivating Contacts by Atomic-Layer-Deposited Nickel Oxide" @default.
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- W4310694354 doi "https://doi.org/10.1109/jphotov.2022.3206895" @default.
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