Matches in SemOpenAlex for { <https://semopenalex.org/work/W4310700334> ?p ?o ?g. }
- W4310700334 endingPage "20456" @default.
- W4310700334 startingPage "20445" @default.
- W4310700334 abstract "Low power and high switching ratio are the development direction of the next generation of resistive random access memory (RRAM). Previous techniques could not increase the switching ratio while reducing the SET power. Here, we report a method to fabricate low-power and high-switching-ratio RRAM by adjusting the interstice radius (rg) between the van der Waals (vdW) layers of transitional-metal dichalcogenides (TMDs), which simultaneously increases the switching ratio and reduces the SET power. The SET voltage, SET power, switching ratio and endurance of the device are strongly correlated with rg. When the ratio of rg to the radius of the metal ions that form the conductive filaments (rg/rAg+) is near 1, the SET voltage and SET power vertically decrease while the switching ratio vertically rises with increasing rg/rAg+. For the fabricated Ag/[SnS2/poly(methyl methacrylate)]/Cu RRAM with an rg/rAg+ of 1.04, the SET voltage, SET power and switching ratio are 0.14 V, 10-10 W and 106, respectively. After 104 switching cycles and a 104 s retention time, the switching ratio of the device can still be stable above 106. Bending has no influence on the performance of the device when the bending radius is not <2 mm." @default.
- W4310700334 created "2022-12-16" @default.
- W4310700334 creator A5002406400 @default.
- W4310700334 creator A5005627824 @default.
- W4310700334 creator A5010646289 @default.
- W4310700334 creator A5032312617 @default.
- W4310700334 creator A5036561324 @default.
- W4310700334 creator A5037402605 @default.
- W4310700334 creator A5039896971 @default.
- W4310700334 creator A5072515446 @default.
- W4310700334 creator A5077311643 @default.
- W4310700334 creator A5082902686 @default.
- W4310700334 creator A5089282270 @default.
- W4310700334 date "2022-12-05" @default.
- W4310700334 modified "2023-10-09" @default.
- W4310700334 title "Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs" @default.
- W4310700334 cites W1612594205 @default.
- W4310700334 cites W1999675064 @default.
- W4310700334 cites W2010438662 @default.
- W4310700334 cites W2016562169 @default.
- W4310700334 cites W2024308908 @default.
- W4310700334 cites W2029896246 @default.
- W4310700334 cites W2038882229 @default.
- W4310700334 cites W2045688835 @default.
- W4310700334 cites W2051736202 @default.
- W4310700334 cites W2063563624 @default.
- W4310700334 cites W2070856049 @default.
- W4310700334 cites W2072046978 @default.
- W4310700334 cites W2083980667 @default.
- W4310700334 cites W2085533815 @default.
- W4310700334 cites W2086344204 @default.
- W4310700334 cites W2092994005 @default.
- W4310700334 cites W2093163236 @default.
- W4310700334 cites W2096415328 @default.
- W4310700334 cites W2099362650 @default.
- W4310700334 cites W2117262972 @default.
- W4310700334 cites W2117809083 @default.
- W4310700334 cites W2121076997 @default.
- W4310700334 cites W2145916608 @default.
- W4310700334 cites W2163884613 @default.
- W4310700334 cites W2170149787 @default.
- W4310700334 cites W2171821962 @default.
- W4310700334 cites W2266992506 @default.
- W4310700334 cites W2290857861 @default.
- W4310700334 cites W2325817821 @default.
- W4310700334 cites W2419374046 @default.
- W4310700334 cites W2422870350 @default.
- W4310700334 cites W2518545199 @default.
- W4310700334 cites W2576947862 @default.
- W4310700334 cites W2584774064 @default.
- W4310700334 cites W2590021551 @default.
- W4310700334 cites W2599351150 @default.
- W4310700334 cites W2612004974 @default.
- W4310700334 cites W2618288086 @default.
- W4310700334 cites W2623487029 @default.
- W4310700334 cites W2741633540 @default.
- W4310700334 cites W2763677237 @default.
- W4310700334 cites W2782685126 @default.
- W4310700334 cites W2797505671 @default.
- W4310700334 cites W2899629710 @default.
- W4310700334 cites W2903343625 @default.
- W4310700334 cites W2903808831 @default.
- W4310700334 cites W2915114969 @default.
- W4310700334 cites W2942548064 @default.
- W4310700334 cites W3028003127 @default.
- W4310700334 cites W3214909740 @default.
- W4310700334 cites W4206836270 @default.
- W4310700334 doi "https://doi.org/10.1021/acsnano.2c06728" @default.
- W4310700334 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/36468939" @default.
- W4310700334 hasPublicationYear "2022" @default.
- W4310700334 type Work @default.
- W4310700334 citedByCount "3" @default.
- W4310700334 countsByYear W43107003342023 @default.
- W4310700334 crossrefType "journal-article" @default.
- W4310700334 hasAuthorship W4310700334A5002406400 @default.
- W4310700334 hasAuthorship W4310700334A5005627824 @default.
- W4310700334 hasAuthorship W4310700334A5010646289 @default.
- W4310700334 hasAuthorship W4310700334A5032312617 @default.
- W4310700334 hasAuthorship W4310700334A5036561324 @default.
- W4310700334 hasAuthorship W4310700334A5037402605 @default.
- W4310700334 hasAuthorship W4310700334A5039896971 @default.
- W4310700334 hasAuthorship W4310700334A5072515446 @default.
- W4310700334 hasAuthorship W4310700334A5077311643 @default.
- W4310700334 hasAuthorship W4310700334A5082902686 @default.
- W4310700334 hasAuthorship W4310700334A5089282270 @default.
- W4310700334 hasConcept C119599485 @default.
- W4310700334 hasConcept C121332964 @default.
- W4310700334 hasConcept C126061179 @default.
- W4310700334 hasConcept C127413603 @default.
- W4310700334 hasConcept C159985019 @default.
- W4310700334 hasConcept C161690185 @default.
- W4310700334 hasConcept C165801399 @default.
- W4310700334 hasConcept C178635117 @default.
- W4310700334 hasConcept C182019814 @default.
- W4310700334 hasConcept C192562407 @default.
- W4310700334 hasConcept C199310435 @default.
- W4310700334 hasConcept C32909587 @default.
- W4310700334 hasConcept C38652104 @default.