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- W4310872008 abstract "HEMT High Electron Mobility Transistor is very suitable for emerging power devices because of its high saturation drain current, high breakdown voltage, and low on-resistance (Ron). Although normally-off operation (enhancement mode) is frequently preferred for fail-safe operation and ease of design, ordinary AlGaN/GaN heterostructures are, by nature, generally ON devices. A HEMT should be a normally-off device, where the channel will not conduct without any gate bias for reasons of safety and power-saving in the OFF mode. However, one of the most important problems in normally-off devices to be resolved is current collapse, also known as enhanced dynamic Ron or drain current dispersion. The reasons for the present collapse and how to reverse it remains crucially vital even if growth and gadget technologies have significantly improved. This work examines an Al0.2Ga0.8N/GaN/Al0.25Ga0.75N/In0.15Ga0.85N/GaN normally-off HEMT that employs a double quantum well. A fieldplated device with a SiN passivation layer was investigated for reducing current collapse and increasing the breakdown voltage." @default.
- W4310872008 created "2022-12-19" @default.
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- W4310872008 date "2022-11-30" @default.
- W4310872008 modified "2023-09-26" @default.
- W4310872008 title "Design of a Normally-off HEMT using Double Quantum Well Structure with Improved Breakdown Characteristics" @default.
- W4310872008 doi "https://doi.org/10.14445/23488379/ijeee-v9i11p103" @default.
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