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- W4310985339 abstract "<tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$Ga_{2}O_{3}$</tex> represents a promising semiconductor material for future high-power electronic devices manufacture. However, this material suffers from a low lattice thermal conductivity and advanced thermal management approaches such as heteroepitaxial growth of <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$Ga_{2}O_{3}$</tex> on substrate with high thermal conductivity, e.g. SiC are needed. Here, we report on growth and structural characterization of monoclinic <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$beta-Ga_{2}O_{3}$</tex> deposited on semi-insulating 4H-SiC substrates using liquid-injection metal-organic chemical vapor deposition (LI-MOCVD). As deduced form X-ray diffraction and transmission electron microscopy, 120-nm thick phase-pure <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$beta-Ga_{2}O_{3}$</tex> shows highly-textured granular crystal structure with six mutually rotated orientation variants and root-mean-square surface roughness of 8 nm. We also manufactured depletion-mode MOSFET devices with <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$Al_{2}O_{3}$</tex> gate dielectric grown by atomic layer deposition method" @default.
- W4310985339 created "2022-12-22" @default.
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- W4310985339 date "2022-10-23" @default.
- W4310985339 modified "2023-09-24" @default.
- W4310985339 title "Structural and electrical properties of $text{Ga}_{2}mathrm{O}_{3}$ transistors grown on 4H-SiC substrates" @default.
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- W4310985339 doi "https://doi.org/10.1109/asdam55965.2022.9966785" @default.
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