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- W4311142330 endingPage "1037" @default.
- W4311142330 startingPage "1032" @default.
- W4311142330 abstract "A non-traditional novel structure of electrically variable double gate nano-scale junctionless transistor is proposed. Simulation study of the proposed structure is performed to understand its performance. Variation of the gate voltages are done to demonstrate the effect of variable gate in the performance of the device. Analysis of the structure shows that improvement in transconductance can be achieved in subthreshold region with the variation in side gate voltages. Independent change in side-gate voltage near the drain and source also shows satisfactory results. Improvement in transconductance, threshold voltage will be suitable for the use of the structure in subthreshold region for circuit application. Variation in side gate length and main gate length are also done for analysis of the proposed gate structure." @default.
- W4311142330 created "2022-12-23" @default.
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- W4311142330 date "2023-01-01" @default.
- W4311142330 modified "2023-10-01" @default.
- W4311142330 title "Performance optimization of electrically variable double gate junctionless transistor with HfO2 gate dielectric" @default.
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- W4311142330 doi "https://doi.org/10.1016/j.matpr.2022.11.458" @default.
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