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• W4311387095 abstract "Abstract Compatible with existing processing technology, chemical vapor deposition method is used to synthesize ZrS 2 and HfS 2 films a a large scale. The nonlinear optical properties are characterized by Z‐scan measurement with femtosecond pulses at 800 nm. The results show that saturable absorption happens in ZrS 2 owing to the larger ground state absorption than the excited state absorption, while reverse saturable absorption appears in HfS 2 due to the two‐photon absorption. The figure of merit values of ZrS 2 (≈4.30 ± 0.12 × 10 −15 esu cm) and HfS 2 (≈6.0 ± 1.4 × 10 −15 esu cm) are much larger than those of MoS 2 and graphene in ultrafast nonlinear optical performance at the wavelength of 800 nm." @default.
• W4311387095 created "2022-12-25" @default.
• W4311387095 creator A5064437443 @default.
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• W4311387095 date "2022-12-13" @default.
• W4311387095 modified "2023-10-14" @default.
• W4311387095 title "Optical Nonlinearity of Emerging ZrS ₂ and HfS ₂ Semiconductors" @default.
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• W4311387095 doi "https://doi.org/10.1002/andp.202200309" @default.
• W4311387095 hasPublicationYear "2022" @default.
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