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• W4311446793 abstract "Abstract In this paper, Cu/Sn/Cu solid-state diffusion (SSD) under low temperature is proposed and investigated for three-dimensional (3-D) integration. Cu and Sn films were deposited by high-efficiency and low-cost physical vapor deposition to fabricate 40- μ m-pitch daisy-chain structures. Subsequently, the Cu bump surface was treated with Ar (5% H 2 ) plasma. The Cu/Sn/Cu structure was bonded face to face at 200 °C for 15 min The interfacial composition of the as-bonded dies comprised five layers, Cu/Cu 3 Sn/Cu 6 Sn 5 /Cu 3 Sn/Cu, with no Sn remaining and no overflow. After annealing at 200 °C for 15 min under N 2 atmosphere, as the Cu 6 Sn 5 completely transformed into Cu 3 Sn, the microstructure changed to stable three layers: Cu/Cu 3 Sn/Cu. Additionally, the average bonding shear strength reached 27.0 MPa, which is higher than that for conventional Cu/Sn SSD bonding. The measured bonding resistance value was maintained at the theoretical value. Moreover, the parabolic growth constant of Cu 3 Sn reached 1.86 × 10 −15 m 2 /s. Our study demonstrates the feasibility of using Cu/Sn/Cu SSD for low-temperature, short-time, wafer-level bonding." @default.
• W4311446793 created "2022-12-26" @default.
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• W4311446793 date "2023-01-17" @default.
• W4311446793 modified "2023-10-07" @default.
• W4311446793 title "Low-temperature, short-time, wafer-level bonding for Cu/Sn/Cu solid-state-diffusion interconnect in 3-D integration" @default.
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• W4311446793 doi "https://doi.org/10.1088/1402-4896/acab8c" @default.
• W4311446793 hasPublicationYear "2023" @default.
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