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• W4311448134 abstract "In this work, a comprehensive investigation on noise analysis for two different low power devices, namely Z-shaped Horizontal Pocket (ZHP) and Hetero Stack (HS) TFETs, is presented within low to high frequency range. The simulation is performed for these structures in the presence of Uniform and Gaussian trap distributions at the interface of Silicon and oxide materials for three different noise namely Flicker noise, Generation Recombination (GR) noise, and Diffusion noise with the help of the Sentaurus TCAD simulator. The result reveals that Flicker and GR noise are dominates at Low Frequency, while, the diffusion noise reports significant influence at the high-frequency range. Finally, a comparative analysis has been done in terms of noise current spectral density (S id ) of the considered structures with the existing literature." @default.
• W4311448134 created "2022-12-26" @default.
• W4311448134 creator A5052892350 @default.
• W4311448134 creator A5065552943 @default.
• W4311448134 date "2022-12-01" @default.
• W4311448134 modified "2023-10-18" @default.
• W4311448134 title "Electrical Noise Analysis of Z Shape Horizontal Pocket and Hetero Stack TFETs under Trap Distribution" @default.
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• W4311448134 doi "https://doi.org/10.1149/2162-8777/acab85" @default.
• W4311448134 hasPublicationYear "2022" @default.
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