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• W4311541837 abstract "Abstract Poly[2-methoxy-5-(2’-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin layer was deposited on silicon nanowires (SiNWs) by electroless dipping method. SiNWs were obtained using Ag-assisted chemical etching process. Scanning Electron Microscopy (SEM) images reveal a vertical alignment of the SiNWs as well as the formation of MEH-PPV layer on their surfaces. The presence of MEH-PPV polymer on the SiNWs surface was confirmed by Energy-dispersive X-ray (EDX). Current-Voltage (I-V) measurements were performed for the electrical characterization of Ag/MEH-PPV/SiNWs diodes before and after annealing. The ideality factor (n), the barrier height (φ b ) and the series resistance (R S ) are determined using the Cheung method. The diode parameters are strongly affected by the immersion duration in MEH-PPV solution as well as the annealing temperature. The rectification rate of the diodes was increased by MEH-PPV deposition. The annealing temperature has a great influence on the diode parameters by the thermal activation of carriers at Ag/MEH-PPV and MEH-PPV/SiNWs interfaces. I-V characteristics show an ohmic character for temperatures above 250° C. The electrical parameters such as equivalent carrier concentration (N D ) and built-in voltage (V b ) and other values of φ b are calculated from Capacitance-Voltage (C-V) measurements." @default.
• W4311541837 created "2022-12-27" @default.
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• W4311541837 date "2022-12-15" @default.
• W4311541837 modified "2023-10-13" @default.
• W4311541837 title "Improvement of the electrical performance of Ag/MEH-PPV/SiNWs Schottky diode by the insertion of a thin layer of MEH-PPV polymer and study of the annealing effect" @default.
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• W4311541837 doi "https://doi.org/10.21203/rs.3.rs-2358965/v1" @default.
• W4311541837 hasPublicationYear "2022" @default.
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