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- W4311593619 abstract "High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m-1K-1) cooling substrates into the wide-bandgap semiconductor of gallium nitride (GaN) devices has been realized [Nature Electronics 4, 416-423 (2021)]. However, the lack of systematic analysis on the heat transfer across the BAs-GaN interface hampers the practical applications. In this study, by constructing the accurate and high-efficient machine learning interatomic potentials, we performed multiscale simulations of the BAs-GaN heterostructures. Ultrahigh interfacial thermal conductance (ITC) of 265 MW m-2K-1 is achieved, which lies in the well-matched lattice vibrations of BAs and GaN. Moreover, the competition between grain size and boundary resistance was revealed with size increasing from 1 nm to 100 {mu}m. Such deep-potential equipped multiscale simulations not only promote the practical applications of BAs cooling substrates in electronics, but also offer new approach for designing advanced thermal management systems." @default.
- W4311593619 created "2022-12-27" @default.
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- W4311593619 date "2022-01-03" @default.
- W4311593619 modified "2023-09-23" @default.
- W4311593619 title "Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates" @default.
- W4311593619 doi "https://doi.org/10.48550/arxiv.2201.00516" @default.
- W4311593619 hasPublicationYear "2022" @default.
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