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• W4311683213 abstract "Two-dimensional semiconductors have great potential in applications of high-performance electrical and optoelectrical devices. Many efforts have been made to meet the challenge of reducing charge scattering between semiconducting and dielectric layers. Hexagonal boron nitride (h-BN) with a large band gap and a flat surface is thus an ideal dielectric layer for addressing this particular requirement. Therefore, preparing high-quality h-BN is an important topic in the electronic industry. In this work, two-opposite orientation growth modes of h-BN domains on liquid Cu are discovered. Comprehensive characterizations verify this anti-orientation feature of the as-grown domains and the grain boundary-free nature in the merged domains with the same orientation. The orientation-controlled h-BN domain growth is achieved by tuning the growth temperature and H2 and Ar flow rates, where the proportion of 0°-orientation domains is modulated in a wide range from ∼54.4 to 75%. Furthermore, based on the controllable growth of oriented h-BN, centimeter-sized h-BN films with high quality are produced." @default.
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• W4311683213 date "2022-12-06" @default.
• W4311683213 modified "2023-10-15" @default.
• W4311683213 title "Large-Area Orientation-Controlled Growth of Hexagonal Boron Nitride on Liquid Copper" @default.
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• W4311683213 doi "https://doi.org/10.1021/acsaelm.2c01367" @default.
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