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• W4311764509 endingPage "114099" @default.
• W4311764509 startingPage "114099" @default.
• W4311764509 abstract "In this work, NiO, which is one of the first known p-type metal oxides, was deposited in different Al doping ratios (1%, 3% and 5%) on both glass and n-type Si substrates by the sol-gel process using spin coating method. The physical characterizations of NiO films and electrical characterization of p-NiO:Al/n-Si heterojunction photodiodes were investigated rely on Al doping. The crystal structure of the NiO film was determined to be a cubic structure in polycrystal nature and it was observed a deterioration in crystallinity rely on increasing Al doping. Both atomic force microscopy and scanning electron microscopy investigations were performed to analysis the surface morphology of the films and all the surfaces exhibited a homogenous structure without cracks and voids. The band gaps were calculated within the scope of the optical property and an increase in the band gap from 3.746 eV to 3.825 eV was observed with the Al doping. As a result of the X-ray photoelectron spectroscopy analysis performed to determine the oxidation states of Ni, it was determined that both Ni+2 and Ni+3 ions were present in the undoped NiO lattice and Ni+2 is reduced due to the substitution of Al+3 and Ni+2 with Al doping. All the heterojunctions based on NiO film showed a good rectifying property and all the diode parameters such as ideality factor (n), barrier height (ɸB) and rectification ratios (RR) were calculated and analyzed depending on the Al incorporation. A decline in n and ɸB values and an increment in RR were determined with increasing Al doping. The photosensitivity and photoresponse behavior of the fabricated p-NiO:Al/n-Si heterojunction photodiodes were investigated under different illumination intensities and depending on the increase in Al doping, while photosensitivity increased, photoresponse decreased." @default.
• W4311764509 created "2022-12-28" @default.
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• W4311764509 date "2023-02-01" @default.
• W4311764509 modified "2023-10-10" @default.
• W4311764509 title "Improving the electrical performance of NiO based photodiode fabricated by sol-gel process with Al doping" @default.
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• W4311764509 doi "https://doi.org/10.1016/j.sna.2022.114099" @default.
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