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- W4311791184 endingPage "4449" @default.
- W4311791184 startingPage "4449" @default.
- W4311791184 abstract "The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It was found that the introduction of LT-GaAs layers, in combination with post-growth cyclic annealing, reduced the threading dislocation density down to 5 × 106 cm−2, the root-mean-square roughness of the GaAs surface down to 1.1 nm, and the concentration of non-radiative recombination centers in the near-surface GaAs/Si regions down to the homoepitaxial GaAs level. Possible reasons for the improvement in the quality of near-surface GaAs layers are discussed. On the one hand, the presence of elastic deformations in the GaAs/LT-GaAs system led to dislocation line bending. On the other hand, gallium vacancies, formed in the LT-GaAs layers, diffused into the overlying GaAs layers and led to an increase in the dislocation glide rate. It was demonstrated that the GaAs/Si HSs obtained with these techniques are suitable for growing high-quality light-emitting HSs with self-assembled quantum dots." @default.
- W4311791184 created "2022-12-28" @default.
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- W4311791184 date "2022-12-14" @default.
- W4311791184 modified "2023-10-17" @default.
- W4311791184 title "Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration" @default.
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- W4311791184 doi "https://doi.org/10.3390/nano12244449" @default.
- W4311791184 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/36558302" @default.
- W4311791184 hasPublicationYear "2022" @default.