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• W4312051036 endingPage "6615" @default.
• W4312051036 startingPage "6610" @default.
• W4312051036 abstract "The mechanism of linearity improvement in AlGaN/GaN high-electron mobility transistors (HEMTs) by low pressure chemical vapor deposition (LPCVD)-SiNx passivation is verified using an asymmetric passivation structure, based on different two-dimensional electron gas (2DEG) enhancement capability between LPCVD-SiNx and SiO2 passivation grown by plasma-enhanced CVD (PECVD). The fabricated AlGaN/GaN HEMTs with a hybrid LPCVD-SiNx/PECVD-SiO2 passivation structure deliver a linearity figure of merit third-order intermodulation point (OIP3)/PDC of 4.36 dB, which is 2.84 dB higher than HEMTs with pure PECVD-SiO2 passivation. Benefiting from the charge and electric field modulation effect of the LPCVD-SINx in the source-gate access region of HEMTs, the current-dependent nonlinear source access resistance is remarkably improved, especially at high current level over 500 mA/mm and high temperature. LPCVD-SINx could be a compelling passivation for the fabrication of high linearity GaN-based power HEMTs." @default.
• W4312051036 created "2023-01-04" @default.
• W4312051036 creator A5032561481 @default.
• W4312051036 creator A5036618346 @default.
• W4312051036 creator A5041128499 @default.
• W4312051036 creator A5047869940 @default.
• W4312051036 creator A5051506849 @default.
• W4312051036 creator A5062952723 @default.
• W4312051036 creator A5080191032 @default.
• W4312051036 creator A5084966610 @default.
• W4312051036 creator A5085654199 @default.
• W4312051036 creator A5085734157 @default.
• W4312051036 date "2022-12-01" @default.
• W4312051036 modified "2023-10-15" @default.
• W4312051036 title "Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiN_<i>x</i> Passivation" @default.
• W4312051036 cites W1541034142 @default.
• W4312051036 cites W1946655857 @default.
• W4312051036 cites W1965817159 @default.
• W4312051036 cites W1994361875 @default.
• W4312051036 cites W2002971582 @default.
• W4312051036 cites W2008137676 @default.
• W4312051036 cites W2039464525 @default.
• W4312051036 cites W2076862654 @default.
• W4312051036 cites W2078913324 @default.
• W4312051036 cites W2080030920 @default.
• W4312051036 cites W2080431801 @default.
• W4312051036 cites W2104713945 @default.
• W4312051036 cites W2163717706 @default.
• W4312051036 cites W2166864529 @default.
• W4312051036 cites W2307191758 @default.
• W4312051036 cites W2344377051 @default.
• W4312051036 cites W2528890757 @default.
• W4312051036 cites W2805528208 @default.
• W4312051036 cites W2897572301 @default.
• W4312051036 cites W2905019842 @default.
• W4312051036 cites W2911503898 @default.
• W4312051036 cites W2946132979 @default.
• W4312051036 cites W2983138701 @default.
• W4312051036 cites W2998156325 @default.
• W4312051036 cites W3012863015 @default.
• W4312051036 cites W3109142893 @default.
• W4312051036 cites W3110707136 @default.
• W4312051036 cites W3126919899 @default.
• W4312051036 cites W3134446960 @default.
• W4312051036 cites W3137229624 @default.
• W4312051036 cites W3171587141 @default.
• W4312051036 doi "https://doi.org/10.1109/ted.2022.3213636" @default.
• W4312051036 hasPublicationYear "2022" @default.
• W4312051036 type Work @default.
• W4312051036 citedByCount "0" @default.
• W4312051036 crossrefType "journal-article" @default.
• W4312051036 hasAuthorship W4312051036A5032561481 @default.
• W4312051036 hasAuthorship W4312051036A5036618346 @default.
• W4312051036 hasAuthorship W4312051036A5041128499 @default.
• W4312051036 hasAuthorship W4312051036A5047869940 @default.
• W4312051036 hasAuthorship W4312051036A5051506849 @default.
• W4312051036 hasAuthorship W4312051036A5062952723 @default.
• W4312051036 hasAuthorship W4312051036A5080191032 @default.
• W4312051036 hasAuthorship W4312051036A5084966610 @default.
• W4312051036 hasAuthorship W4312051036A5085654199 @default.
• W4312051036 hasAuthorship W4312051036A5085734157 @default.
• W4312051036 hasConcept C127413603 @default.
• W4312051036 hasConcept C171250308 @default.
• W4312051036 hasConcept C192562407 @default.
• W4312051036 hasConcept C24326235 @default.
• W4312051036 hasConcept C2779227376 @default.
• W4312051036 hasConcept C33574316 @default.
• W4312051036 hasConcept C38347018 @default.
• W4312051036 hasConcept C49040817 @default.
• W4312051036 hasConcept C57410435 @default.
• W4312051036 hasConcept C77170095 @default.
• W4312051036 hasConceptScore W4312051036C127413603 @default.
• W4312051036 hasConceptScore W4312051036C171250308 @default.
• W4312051036 hasConceptScore W4312051036C192562407 @default.
• W4312051036 hasConceptScore W4312051036C24326235 @default.
• W4312051036 hasConceptScore W4312051036C2779227376 @default.
• W4312051036 hasConceptScore W4312051036C33574316 @default.
• W4312051036 hasConceptScore W4312051036C38347018 @default.
• W4312051036 hasConceptScore W4312051036C49040817 @default.
• W4312051036 hasConceptScore W4312051036C57410435 @default.
• W4312051036 hasConceptScore W4312051036C77170095 @default.
• W4312051036 hasFunder F4320321001 @default.
• W4312051036 hasFunder F4320321133 @default.
• W4312051036 hasFunder F4320335777 @default.
• W4312051036 hasIssue "12" @default.
• W4312051036 hasLocation W43120510361 @default.
• W4312051036 hasOpenAccess W4312051036 @default.
• W4312051036 hasPrimaryLocation W43120510361 @default.
• W4312051036 hasRelatedWork W1481133462 @default.
• W4312051036 hasRelatedWork W2038485973 @default.
• W4312051036 hasRelatedWork W2042136090 @default.
• W4312051036 hasRelatedWork W2042475051 @default.
• W4312051036 hasRelatedWork W2081054537 @default.
• W4312051036 hasRelatedWork W2370976347 @default.
• W4312051036 hasRelatedWork W2970632265 @default.
• W4312051036 hasRelatedWork W3133884175 @default.
• W4312051036 hasRelatedWork W4283034319 @default.
• W4312051036 hasRelatedWork W4312051036 @default.

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