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- W4312069263 abstract "A MoS <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> negative-capacitance field-effect transistor (NCFET) with 6-nm Hf <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</inf> Zr <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> (HZO) as ferroelectric layer and 2-nm Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> as dielectric layer plus a 2-nm low-temperature grown HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> as encapsulation layer is fabricated. Improved device performance, especially hysteresis behavior, is obtained as compared to its counterpart without the encapsulation layer: an almost hysteresis-free behavior (5–20 mV), a subthreshold swing of 36.2 mV/dec and an on/off current ratio of <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$2.8times 10^{7}$</tex> . The improved hysteresis should be associated with enhanced screen effects on charged-impurity scattering and protection from absorption of environmental gas/water molecules by the thin high <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$k$</tex> encapsulation." @default.
- W4312069263 created "2023-01-04" @default.
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- W4312069263 date "2022-11-01" @default.
- W4312069263 modified "2023-10-17" @default.
- W4312069263 title "Hysteresis-free behavior of MoS<sub>2</sub> negative capacitance transistor by using low-temperature grown HfO<sub>2</sub> as encapsulation layer" @default.
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- W4312069263 doi "https://doi.org/10.1109/tencon55691.2022.9977537" @default.
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