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- W4312070467 abstract "Due to the absence of high-performance ambipolar wide-bandgap (WBG) semiconductors, the realization of active transparent photoelectronic devices is precluded. Herein, based on the hybrid functional calculations, we predict that, in a wide-bandgap semiconductor strontium sulfide (SrS), the Br (Rb) substituting S (Sr) is an ideal n (p)-type defect. SrBr 2 and Rb 2 S are promising dopant sources for introducing Br and Rb, respectively. Moreover, the Sr-rich (Sr-poor) condition is the optimum growth environment to fabricate the Br S (Rb Sr ) defects. Thermodynamic equilibrium simulations indicate that the concentration of Br S and Rb Sr can exceed 4 × 10 19 cm −3 at high growth temperatures. After rapid quenching from the growth temperature to room temperature, the free carrier densities can reach 1.56 × 10 19 cm −3 for electrons and 1.02 × 10 18 cm −3 for holes. These results show SrS is a promising ambipolar WBG semiconductor that has huge potential applications in future optoelectronic devices." @default.
- W4312070467 created "2023-01-04" @default.
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- W4312070467 date "2022-12-19" @default.
- W4312070467 modified "2023-09-27" @default.
- W4312070467 title "Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives" @default.
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- W4312070467 doi "https://doi.org/10.1063/5.0125543" @default.
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