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- W4312246539 abstract "Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</inf> Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</inf> N is a promising semiconductor for power electronics, but the mechanism for the conductivity produced by Si doping is controversial. In this work, temperature-dependent Hall measurements were conducted to address the conduction mechanism and electron paramagnetic resonance (EPR) was used to observe the Si dopant and other point defects. The samples studied were 0.5 um thick Al <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.85</inf> Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.15</inf> N films grown by molecular beam epitaxy on a 1 um AlN film on an AlN substrate. The results reveal a nearly temperature independent carrier density, suggesting impurity band conduction. Notably, 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>19</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−3</sup> carriers were detected at room temperature, despite the presence of several defects detected by EPR. The centers include the neutral donor with DX character and a second center, with as-yet undetermined origin, that likely partially compensates the Si donors during growth. The minimal effect of the unintentional defects and DX-character of the dopant is reasoned to be due to 1) the small energy barrier between the donor and DX level and 2) the low density (10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>17</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−3</sup> ) of the unintentional defects. Thus, although the growth of high Al content AlGaN may incur unwanted defects and the Si dopant may be a DX center, usefully high carrier concentrations may be achieved." @default.
- W4312246539 created "2023-01-04" @default.
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- W4312246539 date "2022-06-01" @default.
- W4312246539 modified "2023-10-06" @default.
- W4312246539 title "Compensating defects in high Al content Al<sub>0.85</sub>Ga<sub>0.15</sub>N films grown on an AlN substrate" @default.
- W4312246539 doi "https://doi.org/10.1109/csw55288.2022.9930424" @default.
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