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- W4312343864 abstract "In this paper, a proposed structure of hetero-dielectric stacked buried oxide on the modified source-drain fully depleted silicon on insulator (HB MS-MD FDSOI). It presents improved electrical characteristics over conventional MS-MD FDSOI. The buried oxide (BOX) layer of this structure uses the combination of high-k dielectric (Si3N4_HfO2) to minimize the value of OFF-state current, subthreshold slope, drain induced barrier lowering, and the highest value of ON to OFF current ratio. The impact of buried oxide (Si3N4_HfO2) represents the improvement by 13.77% and 24.63%in subthreshold slope, DIBL, and static power dissipation respectively as compared to conventional MS-MD FDSOI. The proposed structure is simulated using ATLAS 2-D device simulator." @default.
- W4312343864 created "2023-01-04" @default.
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- W4312343864 date "2022-01-01" @default.
- W4312343864 modified "2023-09-26" @default.
- W4312343864 title "Performance Analysis of Hetero-Dielectric Stacked Buried Oxide on Modified Source-Drain FDSOI MOS Transistor" @default.
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- W4312343864 doi "https://doi.org/10.1007/978-981-19-2631-0_19" @default.
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