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- W4312387859 abstract "Due to its atomic thickness and unique energy band structure, 2D semiconductor materials show unique advantages in the field of photodetector devices. However, its further development calls for improving the detectivity, increasing the array integration density, as well as developing processing technologies with large-area, high-resolution and compatible with mainstream semiconductor processes. Here, using a mixed-dimensional hetero-structure strategy, we demonstrated 2D/3D photodetectors including a double heterojunction photodetector with a record-high detectivity of 9.8×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>16</sup> cm Hz <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1/2</sup> W <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>−1</sup> , a photon-controlled diode with a new signal processing behaviour to increase the array integration density, and a 1024-pixel high-performance image sensor array fabricated by a wafer-scale combination patterning method. These photodetectors with high performance and new functions expands the research frontier of mixed-dimensional hetero-structure devices." @default.
- W4312387859 created "2023-01-04" @default.
- W4312387859 creator A5027532667 @default.
- W4312387859 creator A5051481992 @default.
- W4312387859 date "2022-08-21" @default.
- W4312387859 modified "2023-09-27" @default.
- W4312387859 title "Mixed-dimensional 2D/3D photodetectors with high performance and new functions" @default.
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- W4312387859 doi "https://doi.org/10.1109/ifetc53656.2022.9948511" @default.
- W4312387859 hasPublicationYear "2022" @default.
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