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• W4312570440 endingPage "800" @default.
• W4312570440 startingPage "796" @default.
• W4312570440 abstract "In this work, a hafnium–zirconium–aluminum–oxide (HZAO) is proposed and atomic layer deposition (ALD), and its ferroelectricity is shown to be stronger than hafnium–zirconium–oxide (HZO) by measuring polarization versus electric field ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${P} - {E}$ </tex-math></inline-formula> ) loop. Also, a large sharp peak of capacitance–voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${C} - {V}$ </tex-math></inline-formula> ) curve is observed in <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${C} - {V}$ </tex-math></inline-formula> measurement to confirm the strong negative-capacitance (NC) effect. The fabricated MoS2 NCFET using HZAO as a ferroelectric layer of gate-stack exhibits a significantly reduced subthreshold swing (SS) (17 mV/dec almost over four orders of drain current magnitude, with a minimal SS of 12.8 mV/dec) as compared to its counterpart with the HZO ferroelectric layer (a minimal SS of 38.5 mV/dec). The involved mechanisms lie in that incorporation of Al atoms into the HZO film can form the additional hafnium–aluminum–oxide (HAO) and zirconium–aluminum–oxide with ferroelectricity, and as a result, the formed composite HZAO film can convert more monoclinic phases to orthorhombic phase than the HZO film, leading to stronger ferroelectricity for the former than the latter and, thus, smaller SS for its relevant NCFET." @default.
• W4312570440 created "2023-01-05" @default.
• W4312570440 creator A5001022087 @default.
• W4312570440 creator A5028062301 @default.
• W4312570440 creator A5044914665 @default.
• W4312570440 date "2023-02-01" @default.
• W4312570440 modified "2023-10-17" @default.
• W4312570440 title "Improved Subthreshold Swing of MoS₂ Negative-Capacitance Transistor by Using HfZrAlO as Ferroelectric Layer of Gate-Stack" @default.
• W4312570440 cites W1487196268 @default.
• W4312570440 cites W1508277320 @default.
• W4312570440 cites W1575827682 @default.
• W4312570440 cites W1625170149 @default.
• W4312570440 cites W1980932998 @default.
• W4312570440 cites W2012512650 @default.
• W4312570440 cites W2014231066 @default.
• W4312570440 cites W2016106189 @default.
• W4312570440 cites W2038205520 @default.
• W4312570440 cites W2075586275 @default.
• W4312570440 cites W2076972388 @default.
• W4312570440 cites W2092582752 @default.
• W4312570440 cites W2103729014 @default.
• W4312570440 cites W2125667472 @default.
• W4312570440 cites W2163432702 @default.
• W4312570440 cites W2334220755 @default.
• W4312570440 cites W2530496633 @default.
• W4312570440 cites W2618770015 @default.
• W4312570440 cites W2734532847 @default.
• W4312570440 cites W2740597072 @default.
• W4312570440 cites W2744703894 @default.
• W4312570440 cites W2773084460 @default.
• W4312570440 cites W2776963204 @default.
• W4312570440 cites W2784420042 @default.
• W4312570440 cites W2789551230 @default.
• W4312570440 cites W2899442823 @default.
• W4312570440 cites W2901685897 @default.
• W4312570440 cites W2927133044 @default.
• W4312570440 cites W3102637849 @default.
• W4312570440 cites W3104079565 @default.
• W4312570440 doi "https://doi.org/10.1109/ted.2022.3228221" @default.
• W4312570440 hasPublicationYear "2023" @default.
• W4312570440 type Work @default.
• W4312570440 citedByCount "1" @default.
• W4312570440 countsByYear W43125704402023 @default.
• W4312570440 crossrefType "journal-article" @default.
• W4312570440 hasAuthorship W4312570440A5001022087 @default.
• W4312570440 hasAuthorship W4312570440A5028062301 @default.
• W4312570440 hasAuthorship W4312570440A5044914665 @default.
• W4312570440 hasConcept C113196181 @default.
• W4312570440 hasConcept C121332964 @default.
• W4312570440 hasConcept C133386390 @default.
• W4312570440 hasConcept C145598152 @default.
• W4312570440 hasConcept C165801399 @default.
• W4312570440 hasConcept C171250308 @default.
• W4312570440 hasConcept C172385210 @default.
• W4312570440 hasConcept C178790620 @default.
• W4312570440 hasConcept C185592680 @default.
• W4312570440 hasConcept C191897082 @default.
• W4312570440 hasConcept C192562407 @default.
• W4312570440 hasConcept C2779227376 @default.
• W4312570440 hasConcept C2982823382 @default.
• W4312570440 hasConcept C49040817 @default.
• W4312570440 hasConcept C534791751 @default.
• W4312570440 hasConcept C62520636 @default.
• W4312570440 hasConcept C69544855 @default.
• W4312570440 hasConcept C79090758 @default.
• W4312570440 hasConceptScore W4312570440C113196181 @default.
• W4312570440 hasConceptScore W4312570440C121332964 @default.
• W4312570440 hasConceptScore W4312570440C133386390 @default.
• W4312570440 hasConceptScore W4312570440C145598152 @default.
• W4312570440 hasConceptScore W4312570440C165801399 @default.
• W4312570440 hasConceptScore W4312570440C171250308 @default.
• W4312570440 hasConceptScore W4312570440C172385210 @default.
• W4312570440 hasConceptScore W4312570440C178790620 @default.
• W4312570440 hasConceptScore W4312570440C185592680 @default.
• W4312570440 hasConceptScore W4312570440C191897082 @default.
• W4312570440 hasConceptScore W4312570440C192562407 @default.
• W4312570440 hasConceptScore W4312570440C2779227376 @default.
• W4312570440 hasConceptScore W4312570440C2982823382 @default.
• W4312570440 hasConceptScore W4312570440C49040817 @default.
• W4312570440 hasConceptScore W4312570440C534791751 @default.
• W4312570440 hasConceptScore W4312570440C62520636 @default.
• W4312570440 hasConceptScore W4312570440C69544855 @default.
• W4312570440 hasConceptScore W4312570440C79090758 @default.
• W4312570440 hasFunder F4320321001 @default.
• W4312570440 hasIssue "2" @default.
• W4312570440 hasLocation W43125704401 @default.
• W4312570440 hasOpenAccess W4312570440 @default.
• W4312570440 hasPrimaryLocation W43125704401 @default.
• W4312570440 hasRelatedWork W1967924790 @default.
• W4312570440 hasRelatedWork W2025620130 @default.
• W4312570440 hasRelatedWork W2053508813 @default.
• W4312570440 hasRelatedWork W2083139942 @default.
• W4312570440 hasRelatedWork W2090715256 @default.
• W4312570440 hasRelatedWork W2092872563 @default.
• W4312570440 hasRelatedWork W2358006184 @default.
• W4312570440 hasRelatedWork W2400895579 @default.
• W4312570440 hasRelatedWork W2735811683 @default.
• W4312570440 hasRelatedWork W3103823004 @default.

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