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• W4312676856 abstract "β-phase gallium oxide (β-Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> ) has garnered considerable attention due to its large critical electric field strength and the availability of low cost/high quality melt-grown substrates, both of which are advantages over silicon carbide (SiC) and gallium nitride (GaN) in terms of the development radio frequency (RF) and power switching devices. However, because of the low thermal conductivity of β-Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> , thermal management strategies at the device-level are required to accomplish the targeted high power operation. Recent package- and system-level thermal management studies have shown that design solutions based on steady-state operation could lead to ineffective cooling performance under transient thermal loading conditions, and result in an overdesigned cooling system. For these reasons, we performed a comparative study of the thermal dynamics of β-Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> and GaN based transistor devices, which sheds light on the design of device-level transient cooling solutions for β-Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> metal-oxide-semiconductor field-effect transistors (MOSFETs). Results show that replacing the host β-Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> substrate with a high thermal conductivity material, similar to device-level thermal management solutions established for GaN devices, is effective in terms of heat extraction from the device active region under direct current (DC) operating conditions, but not under high frequency power dissipating conditions beyond the ~10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> kHz range. In order to cool lateral β-Ga <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> MOSFETs under transient pulse-powered conditions, additional topside heat extraction via a high thermal conductivity passivation overlayer is necessary." @default.
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• W4312676856 date "2022-05-31" @default.
• W4312676856 modified "2023-09-23" @default.
• W4312676856 title "Device-level Transient Cooling of β-Ga₂O₃ MOSFETs" @default.
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• W4312676856 doi "https://doi.org/10.1109/itherm54085.2022.9899595" @default.
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