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- W4312706336 abstract "This work studies the resistive switching properties in Si/N:SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</inf> (x<2) multilayer (ML) structures. The thickness of Si layers was kept constant (4 nm) while the thickness of the N:SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</inf> layer was changed from 2 to 6 nm to obtain three different MLs labeled as L42, L44 and L46, respectively. In this MLs, Si nanocrystals (Si-ncs) isolated by N:SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</inf> are formed after a thermal annealing process. All MLs exhibit the electroforming process (SET, ON) at forward bias. However, only the L42 ML was able to obtain the RESET (OFF) process allowing the resistive switching between high and low resistance states. ON/OFF ratios of about 10E <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>9</sup> were obtained with SET and RESET voltages below 5V. Moreover, the LRS in the L42 ML was also activated with light." @default.
- W4312706336 created "2023-01-05" @default.
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- W4312706336 date "2022-07-04" @default.
- W4312706336 modified "2023-09-26" @default.
- W4312706336 title "Study of the resistive switching behavior in Si/N:SiO<sub>x</sub> (x<2) multilayer-based MOS devices" @default.
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- W4312706336 doi "https://doi.org/10.1109/laedc54796.2022.9908211" @default.
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