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• W4312771491 abstract "In this work, negative-capacitance field-effect transistors (NCFETs) based on Hf <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{{1}-{x}}$ </tex-math></inline-formula> AlxOy ferroelectric films are fabricated, and the effects of the Al content in Hf <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{{1}-{x}}$ </tex-math></inline-formula> AlxOy films and the thicknesses of the ferroelectric Hf <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{{1}-{x}}$ </tex-math></inline-formula> AlxOy layer/Al2O3 match layer on the electrical properties of the NCFETs are focused. The results show that as the Al content decreases and the thickness of the ferroelectric layer/the match layer increases/decreases, the remanent polarization intensity of the gate-stack of Hf <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{{1}-{x}}$ </tex-math></inline-formula> AlxOy/Al2O3 becomes large, and the subthreshold swing (SS) and total hysteresis of the relevant NCFETs are decreased. When the ratio of Al to Hf is about 1:19 to form Hf0.95Al0.05Oy ferroelectric film and the thicknesses of Hf0.95Al0.05Oy/Al2O3 are 10 nm/2 nm, respectively, excellent device performance is obtained with a low SS of 35.4 mV/dec, high ON/ OFF current ratio of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$5.0times 10^{{6}}, $ </tex-math></inline-formula> and negligible hysteresis of 36.2 mV. The involved mechanisms lie in enhanced ferroelectricity of Hf <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{{1}-{x}}$ </tex-math></inline-formula> AlxOy films and a good matching between the ferroelectric capacitance and MOS capacitance of devices under the suitable structure and process parameters." @default.
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• W4312771491 date "2023-02-01" @default.
• W4312771491 modified "2023-10-18" @default.
• W4312771491 title "Improved Performance of MoS₂ Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO₂/Al₂O₃" @default.
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• W4312771491 doi "https://doi.org/10.1109/ted.2022.3227519" @default.
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