FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4312831736> ?p ?o ?g. }

• W4312831736 endingPage "442" @default.
• W4312831736 startingPage "435" @default.
• W4312831736 abstract "This article presents for the first time a direct connection between gate lag observed in drain current transient measurements of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) and traps located in the barrier of the transistor epitaxy. Semiclassical numerical simulations are presented using the Air Force Research Laboratory’s (AFRL’s) Fermi kinetics transport (FKT) solver and are validated with drain current transient measurements. Capacitance–voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${C} - {V}$ </tex-math></inline-formula> ) and conductance–voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${G} - {V}$ </tex-math></inline-formula> ) measurements are also presented to provide further insights into the trap location used in the FKT simulations. These simulations indicate that equivalent defects located specifically at the AlGaN barrier/GaN cap interface of an AFRL GaN HEMT with a density of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$7.5times 10^{{12}}$ </tex-math></inline-formula> cm−2 and positioned 1.464 eV below the GaN cap conduction band edge were the salient traps linked to the gate-lag phenomenon. The study highlights the importance of experimentally benchmarked device simulation for trapping analysis in GaN HEMTs and may provide significant insights into device engineers for mitigating trapping effects in state-of-the-art GaN technologies." @default.
• W4312831736 created "2023-01-05" @default.
• W4312831736 creator A5007508845 @default.
• W4312831736 creator A5033435194 @default.
• W4312831736 creator A5036794447 @default.
• W4312831736 creator A5038803440 @default.
• W4312831736 creator A5046622978 @default.
• W4312831736 creator A5056257911 @default.
• W4312831736 creator A5060508646 @default.
• W4312831736 creator A5066057801 @default.
• W4312831736 creator A5079773649 @default.
• W4312831736 creator A5085368090 @default.
• W4312831736 date "2023-02-01" @default.
• W4312831736 modified "2023-09-23" @default.
• W4312831736 title "Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport" @default.
• W4312831736 cites W1663276336 @default.
• W4312831736 cites W1968646817 @default.
• W4312831736 cites W1971589004 @default.
• W4312831736 cites W1972815456 @default.
• W4312831736 cites W1975340932 @default.
• W4312831736 cites W1990883443 @default.
• W4312831736 cites W1999491432 @default.
• W4312831736 cites W2055197472 @default.
• W4312831736 cites W2059368011 @default.
• W4312831736 cites W2059631927 @default.
• W4312831736 cites W2072371118 @default.
• W4312831736 cites W2073812790 @default.
• W4312831736 cites W2074352724 @default.
• W4312831736 cites W2081348814 @default.
• W4312831736 cites W2085803222 @default.
• W4312831736 cites W2095299445 @default.
• W4312831736 cites W2110944837 @default.
• W4312831736 cites W2117696652 @default.
• W4312831736 cites W2123047087 @default.
• W4312831736 cites W2133991947 @default.
• W4312831736 cites W2134533022 @default.
• W4312831736 cites W2137778525 @default.
• W4312831736 cites W2141981815 @default.
• W4312831736 cites W2144970115 @default.
• W4312831736 cites W2217816364 @default.
• W4312831736 cites W2314720625 @default.
• W4312831736 cites W2471795202 @default.
• W4312831736 cites W2512106343 @default.
• W4312831736 cites W2598765680 @default.
• W4312831736 cites W2623811665 @default.
• W4312831736 cites W2768056736 @default.
• W4312831736 cites W2889943441 @default.
• W4312831736 cites W2894387668 @default.
• W4312831736 cites W2965037865 @default.
• W4312831736 cites W2974375327 @default.
• W4312831736 cites W3212391347 @default.
• W4312831736 cites W3217412917 @default.
• W4312831736 cites W4214880032 @default.
• W4312831736 cites W4312000338 @default.
• W4312831736 doi "https://doi.org/10.1109/ted.2022.3229291" @default.
• W4312831736 hasPublicationYear "2023" @default.
• W4312831736 type Work @default.
• W4312831736 citedByCount "2" @default.
• W4312831736 countsByYear W43128317362023 @default.
• W4312831736 crossrefType "journal-article" @default.
• W4312831736 hasAuthorship W4312831736A5007508845 @default.
• W4312831736 hasAuthorship W4312831736A5033435194 @default.
• W4312831736 hasAuthorship W4312831736A5036794447 @default.
• W4312831736 hasAuthorship W4312831736A5038803440 @default.
• W4312831736 hasAuthorship W4312831736A5046622978 @default.
• W4312831736 hasAuthorship W4312831736A5056257911 @default.
• W4312831736 hasAuthorship W4312831736A5060508646 @default.
• W4312831736 hasAuthorship W4312831736A5066057801 @default.
• W4312831736 hasAuthorship W4312831736A5079773649 @default.
• W4312831736 hasAuthorship W4312831736A5085368090 @default.
• W4312831736 hasConcept C111919701 @default.
• W4312831736 hasConcept C119599485 @default.
• W4312831736 hasConcept C121332964 @default.
• W4312831736 hasConcept C121932024 @default.
• W4312831736 hasConcept C127413603 @default.
• W4312831736 hasConcept C162057924 @default.
• W4312831736 hasConcept C165801399 @default.
• W4312831736 hasConcept C171250308 @default.
• W4312831736 hasConcept C172385210 @default.
• W4312831736 hasConcept C17525397 @default.
• W4312831736 hasConcept C184720557 @default.
• W4312831736 hasConcept C192562407 @default.
• W4312831736 hasConcept C26873012 @default.
• W4312831736 hasConcept C2778871202 @default.
• W4312831736 hasConcept C2779227376 @default.
• W4312831736 hasConcept C2780799671 @default.
• W4312831736 hasConcept C30066665 @default.
• W4312831736 hasConcept C41008148 @default.
• W4312831736 hasConcept C49040817 @default.
• W4312831736 hasConcept C62520636 @default.
• W4312831736 hasConceptScore W4312831736C111919701 @default.
• W4312831736 hasConceptScore W4312831736C119599485 @default.
• W4312831736 hasConceptScore W4312831736C121332964 @default.
• W4312831736 hasConceptScore W4312831736C121932024 @default.
• W4312831736 hasConceptScore W4312831736C127413603 @default.
• W4312831736 hasConceptScore W4312831736C162057924 @default.
• W4312831736 hasConceptScore W4312831736C165801399 @default.
• W4312831736 hasConceptScore W4312831736C171250308 @default.

• next