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• W4312936664 abstract "We demonstrate the development and characterization of ozonated oxide (DI-O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> ) for applications in photovoltaics and beyond. The growth of DI-O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> is investigated by varying 1) the sample orientation in a wafer cassette., 2) growth time and 3) ozone concentration in parts-per-million (ppm); while the thickness and uniformity of DI-O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> layer on the entire 100 mm diameter are characterized by the multi-wavelength ellipsometer equipped with a wafer mapping capability. DI-O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> samples grown horizontally in the wafer cassette provide better uniformity than vertically grown counterparts (i.e., ±1.62% compared to ±8.02% across 100 mm diameter). A modest increase in DI-O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> thickness is observed with increasing growth time (i.e., from 1 min to 3 min and 10 min). An average of 0.06 nm and 0.10 nm of DI-O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> thickness., respectively., is increased when the growth time is increased by 2 min and 7 min. Varying ozone concentration from 3.5 ppm to 15 ppm., on the other hand., is observed with a minimal effect on DI-O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> growth. Thanks to the growth technique (horizontal orientation and continuous dissolved ozone flow) and parameters (15 ppm., 420 mI/min flow and 30°C of dissolved ozone) used in this contribution., we demonstrate the reproducibility of growing DI-O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> with 1.53±0.01 nm and < 3% uniformity on multiple 100 diameter wafers." @default.
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• W4312936664 date "2022-06-05" @default.
• W4312936664 modified "2023-09-28" @default.
• W4312936664 title "Development of Highly Uniform and Reproducible DI-O₃ layers for Photovoltaic Applications and Beyond" @default.
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• W4312936664 doi "https://doi.org/10.1109/pvsc48317.2022.9938655" @default.
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