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• W4313012430 abstract "We report the monolithic realization of on-chip temperature sensing design using four transistors (4T) in gallium nitride (GaN) technology. The temperature sensor consists of a voltage reference and a logic inverter, both of which are built from enhancement-mode (E-mode) and depletion-mode (D-mode) metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The temperature-insensitive voltage reference outputs a very stable voltage as the input of the logic inverter, which exhibits good temperature dependence in its voltage transfer characteristics. As the temperature varies from 25 to 250 °C, the output voltage of the logic inverter changes linearly. By configuring the active-load D-mode transistor as a two-dimensional electron gas (2DEG) resistor in the logic inverter, the temperature sensing solution is improved further, showing stable sensing output, higher sensitivity (31.28 mV/°C), better linearity ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$text{R}^{{2}}$ </tex-math></inline-formula> = 0.995) and smaller error (±2.74 °C). This demonstrates a compact monolithic sensor for monitoring the on-chip temperature of GaN power integrated circuits (ICs) for protection and control." @default.
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• W4313012430 date "2023-02-01" @default.
• W4313012430 modified "2023-10-18" @default.
• W4313012430 title "A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits" @default.
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• W4313012430 doi "https://doi.org/10.1109/led.2022.3226684" @default.
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