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• W4313018314 abstract "We investigated the mechanism of plasma treatment in enhancing Si–SiO 2 bonding strengths. In particular, two of the most dominant arguments, hydrophilicity and water diffusivity, were experimentally examined. Although Si–SiO 2 bonding is often described as hydrophilic due to its fundamental mechanism, the results here show that changes in hydrophilicity do not have a linear relation with bonding strength. Instead, plasma treatment on SiO 2 surfaces shows a greater effect on the bonding strengths than that on Si surfaces, indicating that water diffusivity plays a crucial role in wafer bonding. In certain circumstances, Si surface treatment in fact deteriorates the bonding strength, which is attributed to the removal of native oxide from the Si wafer." @default.
• W4313018314 created "2023-01-05" @default.
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• W4313018314 date "2022-07-01" @default.
• W4313018314 modified "2023-10-16" @default.
• W4313018314 title "Plasma Treatment Mechanism in Si–SiO₂ Direct Wafer Bonding" @default.
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• W4313018314 doi "https://doi.org/10.1166/sam.2022.4313" @default.
• W4313018314 hasPublicationYear "2022" @default.
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